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| Ordering number : ENA0180 MCH3220 SANYO Semiconductors DATA SHEET MCH3220 Applications * NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features * * * * * * * Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. Ultrasmall package facilitates miniaturization in end products (mounting height: 0.85mm). High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings 15 15 6 3 6 600 0.8 150 --55 to +150 Unit V V V A A mA W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT Conditions VCB=12V, IE=0A VEB=4V, IC=0A VCE=2V, IC=500mA VCE=2V, IC=500mA 250 380 Ratings min typ max 0.1 0.1 400 MHz Unit A A Marking : CT Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80906 / 11006EA MS IM TB-00001969 No. A0180-1/4 MCH3220 Continued from preceding page. Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=10V, f=1MHz IC=1.5A, IB=30mA IC=3A, IB=60mA IC=1.5A, IB=30mA IC=10A, IE=0A IC=1mA, RBE= IE=10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 15 15 6 30 210 11 Ratings min typ 23 70 120 0.85 105 180 1.2 max Unit pF mV mV V V V V ns ns ns Package Dimensions unit : mm 7019A-004 2.0 0.25 0.15 Switching Time Test Circuit PW=20s D.C.1% INPUT 0 to 0.02 IB1 OUTPUT IB2 VR 50 1k 3 2.1 1.6 RL + 470F VCC=5V + 220F 1 0.25 0.65 2 0.3 VBE= --5V 0.85 IC=20IB1= --20IB2=1.5A 1 : Base 2 : Emitter 3 : Collector SANYO : MCPH3 0.07 30mA 3.0 IC -- VCE mA 20 3.0 IC -- VBE VCE=2V 10mA 2.5 15m A 2.5 Collector Current, IC -- A Collector Current, IC -- A 8mA 50mA 2.0 2.0 5mA 1.5 1.5 1.0 1.0 2mA 0.5 1mA IB=0mA 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.5 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Collector-to-Emitter Voltage, VCE -- V IT10384 Base-to-Emitter Voltage, VBE -- V --25C IT10385 25C 3mA Ta=75C No. A0180-2/4 MCH3220 1000 hFE -- IC VCE=2V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 VCE(sat) -- IC IC / IB=20 7 0.1 7 5 3 2 DC Current Gain, hFE 5 Ta=75C 25C 3 --25C C 25 0.01 7 5 = Ta C 75 2 --2 C 5 100 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 Collector Current, IC -- A 3 2 IT10386 2 VCE(sat) -- IC Collector Current, IC -- A IT10387 VBE(sat) -- IC IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 0.1 7 5 1.0 25C Ta= --25C 3 2 2 5C = Ta 75 C 7 5C --2 75C 5 0.01 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A 1000 IT10388 100 f T -- IC Collector Current, IC -- A IT10389 Cob -- VCB VCE=2V Gain-Bandwidth Product, f T -- MHz 7 5 f=1MHz Output Capacitance, Cob -- pF 7 5 3 2 3 2 100 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 IT10390 ASO Collector-to-Base Voltage, VCB -- V 0.9 0.8 IT10391 PC -- Ta ICP=6A IC=3A D C 100s Collector Dissipation, PC -- W 50 0 s 1m Collector Current, IC -- A 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 M ou s nt op ed 0m 10 s io n at 10 er on 0.01 0.01 Ta=25C Single pulse Mounted on a ceramic board (600mm2!0.8mm) 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V ms IT10392 ac er am ic bo ar d (6 00 m m2 ! 0. 8m m ) 160 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C IT10393 No. A0180-3/4 MCH3220 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2006. Specifications and information herein are subject to change without notice. PS No. A0180-4/4 |
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